In the processing of silicon wafers, the principle of wire cutting is to contact the silicon rod through the mortar adhered to the steel wire, and under pressure, the mortar interacts with the silicon polycrystalline rod to erase the excess material.
Wire cutting used copper-plated steel wire mixed mortar cutting technology, but Hebei filter plate needs to be recovered because of the mortar, which increases the cost and production links of the enterprise. In order to improve the production process, the diamond wire cutting process is used. The so-called diamond wire is coated with micro-nano-scale diamond particles on the surface of the steel wire. The cold rail coil avoids the recovery of mortar. But the research of diamond wire coating is less in China, and the price also limits the application in production.
The current mainstream diamond wires include electrowinning diamond wires, electroplated diamond wires and resin diamond wires. These three kinds of diamond wires have their own characteristics in application, but the development of a diamond wire with a smaller diameter and a higher bonding strength has become the industry's demand.
The development and wide application of multi-wire cutting technology is a pioneering progress in the solar industry and the silicon wafer industry, completely replacing the traditional inner circle cutting process. Regardless of production efficiency or quality, multi-wire cutting technology is widely used for its advantages of high production volume, wide range of silicon wafer diameters, low warpage value, shallow surface damage, and low surface finish. Multi-wire cutting technology also has some shortcomings. The thickness of the silicon wafer is poorly processed and cannot be intelligently detected, which is easy to cause single-piece loss.
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